GaN/SiC process integration engineer (semiconductor front-end FAB)
- Hong Kong
- Permanent
- Full-time
- Proficient in semiconductor front-end process technology research and development, with a strong background in process integration for typical CMOS-compatible wide bandgap (SiC or GaN) semiconductor technology.
- Cooperate with R&D device engineers (DE) and FAB process engineers (PE) to develop and provide integration solutions for the specialty semiconductor process technology development.
- Responsible for setting up and updating process platform for wide bandgap (SiC or GaN) process, including process flow generation and optimization, design rule generation and development testchip layout design, process integration DOE design and execution, MES/SPC/WIP/WAT data review and flow control, etc.
- Responsible for resolving integration issues and work with PE for improving inline/offline process control and yield improvement.
- Provide training sessions for team members and trainees on the best practices.
- Ensure full flow process for baseline and advanced processes both in development and in volume production, maintain comprehensive documentation of process integration, troubleshooting, and updates for reference and compliance purposes.
- Bachelor’s degree in Microelectronics, Physics, Chemistry and Material Science, advanced degrees or certifications are a plus.
- At least 10 years’ working experience in semiconductor FABs, with direct experience in typical wide bandgap (SiC or GaN) semiconductor process integration in CMOS-compatible FAB. Development experience in front-end process module, such as etch or thin film, is a plus.
- Strong analytical skills and the ability to resolve technical challenges efficiently.
- Good written and verbal communication skills in English and Chinese to coordinate with diverse internal process teams and device teams.
- Comfort working in a high-pressure, evolving environment with tight deadlines.
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